11NK100Z Tranzistors N-FET, 1000V, ±30V, 8.3A, 230W, 1R1, TO-247
11NK100Z Tranzistors N-FET, 1000V, ±30V, 8.3A, 230W, 1R1, TO-247

* Produktu fotogrāfijas ir tikai noskatīšanai un var dažreiz atšķirties no priekšmeta reāla izskata. Bet galvenās īpašības ir vienādas.

11NK100Z Tranzistors N-FET, 1000V, ±30V, 8.3A, 230W, 1R1, TO-247

Cena: 4.43 €
00020179
STW11NK100Z
13
  • Apraksts

    • Manufacturer: STMicroelectronics
    • Product Category: MOSFET
    • RoHS: Details
    • Technology: Si
    • Mounting Style: Through Hole
    • Package/Case: TO-247-3
    • Transistor Polarity: N-Channel
    • Number of Channels: 1 Channel
    • Vds - Drain-Source Breakdown Voltage: 1 kV
    • Id - Continuous Drain Current: 8.3 A
    • Rds On - Drain-Source Resistance: 1.38 Ohms
    • Vgs - Gate-Source Voltage: - 30 V, + 30 V
    • Vgs th - Gate-Source Threshold Voltage: 3 V
    • Qg - Gate Charge: 113 nC
    • Minimum Operating Temperature: - 55 C
    • Maximum Operating Temperature: + 150 C
    • Pd - Power Dissipation: 230 W
    • Channel Mode: Enhancement
    • Tradename: SuperMESH
    • Series: STW11NK100Z
    • Packaging: Tube
    • Brand: STMicroelectronics
    • Configuration: Single
    • Fall Time: 55 ns
    • Forward Transconductance - Min: 9 S
    • Height: 20.15 mm
    • Length: 15.75 mm
    • Product Type: MOSFET
    • Rise Time: 18 ns

    Parametri

    1000V
    8.3A
    230W
    1R1
    TO-247

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