Apraksts

• Manufacturer: STMicroelectronics
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-247-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 1 kV
• Id - Continuous Drain Current: 8.3 A
• Rds On - Drain-Source Resistance: 1.38 Ohms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Vgs th - Gate-Source Threshold Voltage: 3 V
• Qg - Gate Charge: 113 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 230 W
• Channel Mode: Enhancement
• Tradename: SuperMESH
• Series: STW11NK100Z
• Packaging: Tube
• Brand: STMicroelectronics
• Configuration: Single
• Fall Time: 55 ns
• Forward Transconductance - Min: 9 S
• Height: 20.15 mm
• Length: 15.75 mm
• Product Type: MOSFET
• Rise Time: 18 ns

Parametri

1000V
8.3A
230W
1R1
TO-247

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