Apraksts

• Manufacturer IXYS
• Type of transistor N-MOSFET
• Technology HiPerFET™
• Polarisation unipolar
• Drain-source voltage 1kV
• Drain current 12A
• Power dissipation 300W
• Case TO247-3
• Gate-source voltage ±20V
• On-state resistance 1.05Ω
• Mounting THT
• Gate charge 90nC
• Kind of package tube
• Kind of channel enhanced
• Reverse recovery time 250ns
• Additional information
• Gross weight: 9 g
• Manufacturer part number: IXFH12N100Q

Parametri

1000V
12A
300W
1R05
TO-247

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