Apraksts

• Manufacturer: onsemi
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 100 V
• Id - Continuous Drain Current: 12.8 A
• Rds On - Drain-Source Resistance: 180 mOhms
• Vgs - Gate-Source Voltage: - 25 V, + 25 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 16 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 65 W
• Channel Mode: Enhancement
• Tradename: QFET
• Series: FQP13N10
• Packaging: Tube
• Brand: onsemi / Fairchild
• Configuration: Single
• Fall Time: 25 ns
• Forward Transconductance - Min: 6.8 S
• Height: 16.3 mm
• Length: 10.67 mm
• Product Type: MOSFET
• Rise Time: 55 ns

Parametri

100V
12.8A
65W
0R181
TO-220

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