Apraksts

• Manufacturer IXYS
• Type of transistor N-MOSFET
• Polarisation unipolar
• Drain-source voltage 100V
• Drain current 180A
• Power dissipation 480W
• Case TO220AB
• On-state resistance 6mΩ
• Mounting THT
• Gate charge 185nC
• Kind of package tube
• Kind of channel enhanced
• Features of semiconductor devices thrench gate power mosfet
• Reverse recovery time 66ns

Parametri

100V
180A
480W
0R006
TO-220

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