Apraksts

• Manufacturer TOSHIBA
• Type of transistor N-MOSFET
• Polarisation unipolar
• Drain-source voltage 100V
• Drain current 40A
• Power dissipation 126W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 8.2mΩ
• Mounting THT
• Gate charge 49nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.97 g
• Manufacturer part number: TK40E10N1,S1X(S

Parametri

100V
40A
TO-220
126W
0R0068

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