CSD19531KCS Tranzistors N-FET, 100V, Vgs(2.2...3.3V), ±20V, 100A, 214W, 0R0073, TO-220
CSD19531KCS Tranzistors N-FET, 100V, Vgs(2.2...3.3V), ±20V, 100A, 214W, 0R0073, TO-220

* Produktu fotogrāfijas ir tikai noskatīšanai un var dažreiz atšķirties no priekšmeta reāla izskata. Bet galvenās īpašības ir vienādas.

CSD19531KCS Tranzistors N-FET, 100V, Vgs(2.2...3.3V), ±20V, 100A, 214W, 0R0073, TO-220

Cena: 2.78 €
00014745
CSD19531KCS
10
  • Apraksts

    • Manufacturer TEXAS INSTRUMENTS
    • Type of transistor N-MOSFET
    • Technology NexFET™
    • Polarisation unipolar
    • Drain-source voltage 100V
    • Drain current 100A
    • Power dissipation 214W
    • Case TO220-3
    • Gate-source voltage ±20V
    • On-state resistance 6.4mΩ
    • Mounting THT
    • Gate charge 37nC
    • Kind of package tube
    • Kind of channel enhanced
    • Heatsink thickness 1.14...1.4mm
    • Additional information
    • Gross weight: 2.008 g
    • Manufacturer part number: CSD19531KCS

    Parametri

    100V
    100A
    214W
    0R0073
    TO-220

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