Apraksts

• Manufacturer TEXAS INSTRUMENTS
• Type of transistor N-MOSFET
• Technology NexFET™
• Polarisation unipolar
• Drain-source voltage 100V
• Drain current 100A
• Power dissipation 214W
• Case TO220-3
• Gate-source voltage ±20V
• On-state resistance 6.4mΩ
• Mounting THT
• Gate charge 37nC
• Kind of package tube
• Kind of channel enhanced
• Heatsink thickness 1.14...1.4mm
• Additional information
• Gross weight: 2.008 g
• Manufacturer part number: CSD19531KCS

Parametri

100V
100A
214W
0R0073
TO-220

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