IPP16CN10NG(16CN10) Tranzistors N-FET, 100V, ±20V, 53A, 100W, 0R016, TO-220
IPP16CN10NG(16CN10) Tranzistors N-FET, 100V, ±20V, 53A, 100W, 0R016, TO-220

* Produktu fotogrāfijas ir tikai noskatīšanai un var dažreiz atšķirties no priekšmeta reāla izskata. Bet galvenās īpašības ir vienādas.

IPP16CN10NG(16CN10) Tranzistors N-FET, 100V, ±20V, 53A, 100W, 0R016, TO-220

Cena: 2.52 €
00025517
IPP16CN10NG
8
  • Apraksts

    • Manufacturer: Infineon
    • Product Category: MOSFET
    • RoHS: Details
    • Technology: Si
    • Mounting Style: Through Hole
    • Package/Case: TO-220-3
    • Transistor Polarity: N-Channel
    • Number of Channels: 1 Channel
    • Vds - Drain-Source Breakdown Voltage: 100 V
    • Id - Continuous Drain Current: 53 A
    • Rds On - Drain-Source Resistance: 16 mOhms
    • Vgs - Gate-Source Voltage: - 20 V, + 20 V
    • Vgs th - Gate-Source Threshold Voltage: 3 V
    • Qg - Gate Charge: 48 nC
    • Minimum Operating Temperature: - 55 C
    • Maximum Operating Temperature: + 175 C
    • Pd - Power Dissipation: 100 W
    • Channel Mode: Enhancement
    • Tradename: OptiMOS
    • Series: OptiMOS 2
    • Packaging: Tube
    • Brand: Infineon Technologies
    • Configuration: Single
    • Height: 15.65 mm
    • Length: 10 mm
    • Product Type: MOSFET

    Parametri

    100V
    53A
    100W
    0R016
    TO-220

    Papildu dokumentācija

Saistītie produkti