Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 100V
• Drain current 9.7A
• Power dissipation 48W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 0.2Ω
• Mounting THT
• Gate charge 16.7nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.963 g
• Manufacturer part number: IRF520NPBF

Parametri

100V
9.7A
48W
0R02
TO-220

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