Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-262-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 100 V
• Id - Continuous Drain Current: 17 A
• Rds On - Drain-Source Resistance: 90 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Qg - Gate Charge: 24.7 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 79 W
• Channel Mode: Enhancement
• Brand: Infineon / IR
• Configuration: Single
• Fall Time: 25 ns
• Height: 9.45 mm
• Length: 10.2 mm
• Product Type: MOSFET
• Rise Time: 22 ns
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel
• Type: HEXFET Power MOSFET
• Typical Turn-Off Delay Time: 35 ns
• Typical Turn-On Delay Time: 9.2 ns

Parametri

100V
17A
79W
0R11
TO-262

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