Apraksts

• Manufacturer VISHAY
• Type of transistor N-MOSFET
• Polarisation unipolar
• Drain-source voltage 100V
• Drain current 20A
• Power dissipation 150W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 77mΩ
• Mounting THT
• Gate charge 72nC
• Kind of package tube
• Kind of channel enhanced
• Papildu informācijas
• Masa bruto: 1.965 g
• Oriģināls simbols: IRF540PBF

Parametri

100V
22A
150W
0R077
TO-220

Papildu dokumentācija