Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-262-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 100 V
• Id - Continuous Drain Current: 33 A
• Rds On - Drain-Source Resistance: 44 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 47.3 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 140 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Infineon / IR
• Configuration: Single
• Height: 9.45 mm
• Length: 10.2 mm
• Product Type: MOSFET

Parametri

100V
33A
94W
0R044
TO-262

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