Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 100V
• Drain current 130A
• Power dissipation 370W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 4.5mΩ
• Mounting THT
• Gate charge 150nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.968 g
• Manufacturer part number: IRFB4110PBF

Parametri

100V
120A
370W
0R037
TO-220

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