Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 100V
• Drain current 48A
• Power dissipation 200W
• Case TO220AB
• Gate-source voltage ±16V
• On-state resistance 26mΩ
• Mounting THT
• Gate charge 93.3nC
• Kind of package tube
• Kind of channel enhanced
• Features of semiconductor devices logic level
• Additional information
• Gross weight: 1.98 g
• Manufacturer part number: IRL2910PBF

Parametri

100V
55A
200W
0R026
TO-220

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