Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 100V
• Drain current 36A
• Power dissipation 140W
• Case TO220AB
• Gate-source voltage ±16V
• On-state resistance 44mΩ
• Mounting THT
• Gate charge 49.3nC
• Kind of package tube
• Kind of channel enhanced
• Features of semiconductor devices logic level
• Additional information
• Gross weight: 1.97 g
• Manufacturer part number: IRL540NPBF

Parametri

100V
0R053
TO-220AB
36A
140W

Papildu dokumentācija