Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 150V
• Drain current 43A
• Power dissipation 200W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 42mΩ
• Mounting THT
• Gate charge 133.3nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.957 g
• Manufacturer part number: IRF3415PBF

Parametri

150V
37A
150W
0R042
TO-220AB

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