Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 150V
• Drain current 35A
• Power dissipation 144W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 39mΩ
• Mounting THT
• Gate charge 26nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.972 g
• Manufacturer part number: IRFB4615PBF

Parametri

150V
41A
200W
0R045
TO-220

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