Apraksts

• Manufacturer: Diodes Incorporated
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-92-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 200 V
• Id - Continuous Drain Current: 120 mA
• Rds On - Drain-Source Resistance: 30 Ohms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 1 V
• Qg - Gate Charge: -
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 500 mW
• Channel Mode: Enhancement
• Packaging: Bulk
• Brand: Diodes Incorporated
• Configuration: Single
• Fall Time: 8 ns
• Forward Transconductance - Min: 100 mS
• Height: 4.01 mm
• Length: 4.77 mm
• Product: MOSFET Small Signal
• Product Type: MOSFET
• Rise Time: 8 ns
• Series: BS107

Parametri

200V
0.12A
0.5W
15R
TO-92S

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