Apraksts

• Manufacturer: Vishay
• Product Category: MOSFET
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-220AB-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 200 V
• Id - Continuous Drain Current: 18 A
• Rds On - Drain-Source Resistance: 180 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 4 V
• Qg - Gate Charge: 7- nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 125 mW (1/8 W)
• Channel Mode: Enhancement
• Packaging: Tube
• Configuration: Single
• Height: 15.49 mm
• Length: 10.41 mm
• Series: IRF
• Transistor Type: 1 N-Channel
• Width: 4.7 mm
• Brand: Vishay Semiconductors
• Fall Time: 36 ns
• Product Type: MOSFET
• Rise Time: 45 ns
• Subcategory: MOSFETs
• Typical Turn-Off Delay Time: 45 ns
• Typical Turn-On Delay Time: 14 ns

Parametri

200V
18A
125W
0R15
TO-220

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