Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 200 V
• Id - Continuous Drain Current: 44 A
• Rds On - Drain-Source Resistance: 54 mOhms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Vgs th - Gate-Source Threshold Voltage: 1.8 V
• Qg - Gate Charge: 91 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 3.8 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Infineon Technologies
• Configuration: Single
• Fall Time: 47 ns
• Forward Transconductance - Min: 17 S
• Height: 15.65 mm
• Length: 10 mm
• Product Type: MOSFET
• Rise Time: 95 ns

Parametri

200V
44A
320W
0R054
TO-220AB

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