Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 200V
• Drain current 65A
• Power dissipation 190W
• Case TO220AB
• Gate-source voltage ±30V
• On-state resistance 26mΩ
• Mounting THT
• Gate charge 70nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.933 g
• Manufacturer part number: IRFB4227PBF

Parametri

200V
65A
330W
0R0197
TO-220

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