IRFD220 Tranzistors N-FET, 200V, 0.8A, 1W, 0R8, DIP4
IRFD220 Tranzistors N-FET, 200V, 0.8A, 1W, 0R8, DIP4

* Produktu fotogrāfijas ir tikai noskatīšanai un var dažreiz atšķirties no priekšmeta reāla izskata. Bet galvenās īpašības ir vienādas.

IRFD220 Tranzistors N-FET, 200V, 0.8A, 1W, 0R8, DIP4

Cena: 1.01 €
00016942
IRFD220
6
  • Apraksts

    • Manufacturer: onsemi
    • Product Category: MOSFET
    • Technology: Si
    • Mounting Style: Through Hole
    • Package/Case: HVMDIP-4
    • Transistor Polarity: N-Channel
    • Number of Channels: 1 Channel
    • Vds - Drain-Source Breakdown Voltage: 200 V
    • Id - Continuous Drain Current: 800 mA
    • Rds On - Drain-Source Resistance: 800 mOhms
    • Vgs - Gate-Source Voltage: - 20 V, + 20 V
    • Minimum Operating Temperature: - 55 C
    • Maximum Operating Temperature: + 150 C
    • Pd - Power Dissipation: 1 W
    • Channel Mode: Enhancement
    • Brand: onsemi / Fairchild
    • Configuration: Single
    • Fall Time: 30 ns
    • Height: 3.4 mm
    • Length: 5.02 mm
    • Product Type: MOSFET
    • Rise Time: 30 ns
    • Subcategory: MOSFETs
    • Transistor Type: 1 N-Channel
    • Typical Turn-Off Delay Time: 50 ns
    • Typical Turn-On Delay Time: 20 ns
    • Width: 6.29 mm

    Parametri

    200V
    0.8A
    1W
    0R8
    DIP4

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