Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 200V
• Drain current 30A
• Power dissipation 214W
• Case TO247AC
• Gate-source voltage ±20V
• On-state resistance 75mΩ
• Mounting THT
• Gate charge 123nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 5.55 g
• Manufacturer part number: IRFP250NPBF

Parametri

200V
30A
214W
0R075
TO-247

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