Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 200V
• Drain current 35A
• Power dissipation 300W
• Case TO247AC
• Gate-source voltage ±20V
• On-state resistance 40mΩ
• Mounting THT
• Gate charge 234nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 5.5 g
• Manufacturer part number: IRFP260NPBF

Parametri

200V
46A
280W
0R055
TO-247

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