Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 200V
• Drain current 65A
• Power dissipation 330W
• Case TO247AC
• Gate-source voltage ±30V
• On-state resistance 25mΩ
• Mounting THT
• Gate charge 70nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 5.8 g
• Manufacturer part number: IRFP4227PBF

Parametri

200V
65A
330W
0R021
TO-247

Papildu dokumentācija