Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 200V
• Drain current 94A
• Power dissipation 580W
• Case TO247AC
• Gate-source voltage ±30V
• On-state resistance 23mΩ
• Mounting THT
• Gate charge 180nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 5.605 g
• Manufacturer part number: IRFP90N20DPBF

Parametri

200V
94A
580W
0R023
TO-247

Papildu dokumentācija