Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-251-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 200 V
• Id - Continuous Drain Current: 5 A
• Rds On - Drain-Source Resistance: 600 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 1.8 V
• Qg - Gate Charge: 15 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 43 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Infineon Technologies
• Configuration: Single
• Fall Time: 12 ns
• Forward Transconductance - Min: 2.6 S
• Height: 6.22 mm
• Length: 6.73 mm
• Product Type: MOSFET
• Rise Time: 11 ns

Parametri

200V
5A
43W
0R6
TO-251

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