Apraksts

• Manufacturer: onsemi
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-3PN-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 250 V
• Id - Continuous Drain Current: 59 A
• Rds On - Drain-Source Resistance: 49 mOhms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Vgs th - Gate-Source Threshold Voltage: 3 V
• Qg - Gate Charge: 82 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 392 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: onsemi / Fairchild
• Configuration: Single
• Fall Time: 170 ns
• Forward Transconductance - Min: 45 S
• Height: 20.1 mm
• Length: 16.2 mm
• Product Type: MOSFET
• Rise Time: 480 ns
• Series: FDA59N25

Parametri

250V
59A
392W
0R041
TO-3P

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