Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 250V
• Drain current 46A
• Power dissipation 330W
• Case TO220AB
• Gate-source voltage ±30V
• On-state resistance 46mΩ
• Mounting THT
• Gate charge 72nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.938 g
• Manufacturer part number: IRFB4229PBF

Parametri

250V
330W
0R038
TO-220
46A

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