Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 40 V
• Id - Continuous Drain Current: 100 A
• Rds On - Drain-Source Resistance: 9 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 62 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 170 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Infineon Technologies
• Configuration: Single
• Fall Time: 19 ns
• Height: 15.65 mm
• Length: 10 mm
• Product Type: MOSFET
• Rise Time: 114 ns
• 3000
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel
• Type: Preliminary
• Typical Turn-Off Delay Time: 28 ns
• Typical Turn-On Delay Time: 15 ns
• Width: 4.4 mm
• Part # Aliases: IRF1104PBF SP001570050
• Unit Weight: 2 g

Parametri

40V
100A
170W
0R009
TO-220AB

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