Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 40V
• Drain current 208A
• Power dissipation 208W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 2.5mΩ
• Mounting THT
• Gate charge 90nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.946 g
• Manufacturer part number: IRFB7440PBF

Parametri

40V
120A
208W
0R002
TO-220

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