Apraksts

• Manufacturer STMicroelectronics
• Type of transistor N-MOSFET
• Technology MDmesh™
• Polarisation unipolar
• Drain-source voltage 500V
• Drain current 12.6A
• Power dissipation 190W
• Case TO247
• Gate-source voltage ±30V
• On-state resistance 270mΩ
• Mounting THT
• Kind of package tube
• Kind of channel enhanced
• Features of semiconductor devices ESD protected gate
• Additional information
• Gross weight: 4.542 g
• Manufacturer part number: STW20NK50Z

Parametri

500V
17A
190W
0R23
TO-247

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