Apraksts

• Manufacturer ONSEMI
• Type of transistor N-MOSFET
• Technology DMOS, UniFET™
• Polarisation unipolar
• Drain-source voltage 500V
• Drain current 17A
• Pulsed drain current 112A
• Power dissipation 310W
• Case TO3PN
• Gate-source voltage ±30V
• On-state resistance 155mΩ
• Mounting THT
• Gate charge 105nC
• Kind of package tube
• Kind of channel enhancement
• Masa bruto5.21 g

Parametri

500V
28A
310W
0R0122
TO-3PN

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