Apraksts

• Manufacturer: Toshiba
• Product Category: MOSFET
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 500 V
• Id - Continuous Drain Current: 8 A
• Rds On - Drain-Source Resistance: 850 mOhms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 74 W
• Channel Mode: Enhancement
• Series: 2SK3759
• Brand: Toshiba
• Configuration: Single
• Fall Time: 38 ns
• Height: 15.1 mm
• Length: 10.16 mm
• Product Type: MOSFET
• Rise Time: 26 ns
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel
• Typical Turn-Off Delay Time: 58 ns
• Typical Turn-On Delay Time: 13 ns
• Width: 4.45 mm
• Unit Weight: 2 g

Parametri

500V
5A
74W
0R75
TO-220AB

Papildu dokumentācija