Apraksts

• Manufacturer: IXYS
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-264-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 500 V
• Id - Continuous Drain Current: 44 A
• Rds On - Drain-Source Resistance: 140 mOhms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Vgs th - Gate-Source Threshold Voltage: 3 V
• Qg - Gate Charge: 98 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 650 W
• Channel Mode: Enhancement
• Tradename: HiPerFET
• Series: HiPerFET
• Packaging: Tube
• Brand: IXYS
• Configuration: Single
• Fall Time: 27 ns
• Forward Transconductance - Min: 32 S
• Height: 26.16 mm
• Length: 19.96 mm
• Product Type: MOSFET
• Rise Time: 29 ns

Parametri

500V
44A
500W
0R12
TO-264

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