Apraksts

• Manufacturer IXYS
• Type of transistor N-MOSFET
• Technology HiPerFET™, Polar3™
• Polarisation unipolar
• Drain-source voltage 500V
• Drain current 60A
• Power dissipation 1040W
• Case TO247-3
• Gate-source voltage ±30V
• On-state resistance 110mΩ
• Mounting THT
• Gate charge 96nC
• Kind of package tube
• Kind of channel enhanced
• Reverse recovery time 250ns

Parametri

500V
TO-247
60A
1040W
0R11

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