Apraksts

• Manufacturer VISHAY
• Type of transistor N-MOSFET
• Polarisation unipolar
• Drain-source voltage 500V
• Drain current 5.1A
• Power dissipation 125W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 850mΩ
• Mounting THT
• Gate charge 63nC
• Kind of package tube
• Kind of channel enhanced
• Papildu informācijas
• Masa bruto: 1.95 g
• Oriģināls simbols: IRF840PBF

Parametri

500V
8A
125W
0R85
TO-220

Papildu dokumentācija