Apraksts

• Manufacturer VISHAY
• Type of transistor N-MOSFET
• Polarisation unipolar
• Drain-source voltage 500V
• Drain current 8A
• Pulsed drain current 5.1A
• Power dissipation 125W
• Case TO220AB
• Gate-source voltage ±30V
• On-state resistance 850mΩ
• Mounting THT
• Gate charge 39nC
• Kind of package tube
• Kind of channel enhanced
• Heatsink thickness 1.14...1.4mm
• Additional information
• Gross weight: 1.955 g
• Manufacturer part number: IRF840LCPBF

Parametri

500V
8A
125W
0R85
TO-220

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