Apraksts

• Manufacturer VISHAY
• Type of transistor N-MOSFET
• Polarisation unipolar
• Drain-source voltage 500V
• Drain current 11A
• Power dissipation 220W
• Case TO220AB
• Gate-source voltage ±30V
• On-state resistance 260mΩ
• Mounting THT
• Gate charge 120nC
• Kind of package tube
• Kind of channel enhanced
• Papildu informācijas
• Masa bruto: 1.98 g
• Oriģināls simbols: IRFB18N50KPBF

Parametri

500V
17A
220W
0R26
TO-220AB

Papildu dokumentācija