Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 55V
• Drain current 72A
• Power dissipation 130W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 11mΩ
• Mounting THT
• Gate charge 80nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.948 g
• Manufacturer part number: IRF1010NPBF

Parametri

55V
60A
180W
0R011
TO-220

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