Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 55V
• Drain current 133A
• Power dissipation 200W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 5.3mΩ
• Mounting THT
• Gate charge 170nC
• Kind of package tube
• Kind of channel enhanced
• Papildu informācijas
• Masa bruto: 1.967 g
• Oriģināls simbols: IRF1405PBF

Parametri

55V
169A
330W
0R0053
TO-220AB

Papildu dokumentācija