Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 55V
• Drain current 19A
• Power dissipation 31W
• Case TO220FP
• Gate-source voltage ±20V
• On-state resistance 40mΩ
• Mounting THT
• Gate charge 22.7nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 2.137 g
• Manufacturer part number: IRFIZ34NPBF

Parametri

55V
21A
37W
0R04
TO-220F

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