Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 55V
• Drain current 17A
• Power dissipation 45W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 70mΩ
• Mounting THT
• Gate charge 13.3nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.945 g
• Manufacturer part number: IRFZ24NPBF

Parametri

55V
17A
60W
0R07
TO-220

Papildu dokumentācija