Apraksts

• Manufacturer: STMicroelectronics
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 600 V
• Id - Continuous Drain Current: 10 A
• Rds On - Drain-Source Resistance: 750 mOhms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Vgs th - Gate-Source Threshold Voltage: 3 V
• Qg - Gate Charge: 70 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 115 W
• Channel Mode: Enhancement
• Tradename: SuperMESH
• Packaging: Tube
• Brand: STMicroelectronics
• Configuration: Single
• Fall Time: 30 ns
• Forward Transconductance - Min: 7.8 S
• Height: 9.15 mm
• Length: 10.4 mm
• Product Type: MOSFET
• Rise Time: 20 ns
• Series: STP10NK60Z

Parametri

600V
10A
115W
0R65
TO-220

Papildu dokumentācija