Apraksts

• Manufacturer STMicroelectronics
• Type of transistor N-MOSFET
• Technology SuperMesh™
• Polarisation unipolar
• Drain-source voltage 600V
• Drain current 5.7A
• Power dissipation 35W
• Case TO220FP
• Gate-source voltage ±30V
• On-state resistance 750mΩ
• Mounting THT
• Kind of package tube
• Kind of channel enhanced
• Features of semiconductor devices ESD protected gate

Parametri

600V
10A
35W
0R65
TO-220FP

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