4NK60Z Tranzistors N-FET, 600V, 4A, 70W, 1R76, TO-220
4NK60Z Tranzistors N-FET, 600V, 4A, 70W, 1R76, TO-220

* Produktu fotogrāfijas ir tikai noskatīšanai un var dažreiz atšķirties no priekšmeta reāla izskata. Bet galvenās īpašības ir vienādas.

4NK60Z Tranzistors N-FET, 600V, 4A, 70W, 1R76, TO-220

Cena: 0.90 €
00019124
STP4NK60Z
6
  • Apraksts

    • Manufacturer: STMicroelectronics
    • Product Category: MOSFET
    • RoHS: Details
    • Technology: Si
    • Mounting Style: Through Hole
    • Package/Case: TO-220-3
    • Transistor Polarity: N-Channel
    • Number of Channels: 1 Channel
    • Vds - Drain-Source Breakdown Voltage: 600 V
    • Id - Continuous Drain Current: 4 A
    • Rds On - Drain-Source Resistance: 2 Ohms
    • Vgs - Gate-Source Voltage: - 30 V, + 30 V
    • Vgs th - Gate-Source Threshold Voltage: 3 V
    • Qg - Gate Charge: 26 nC
    • Minimum Operating Temperature: - 55 C
    • Maximum Operating Temperature: + 150 C
    • Pd - Power Dissipation: 70 W
    • Channel Mode: Enhancement
    • Tradename: SuperMESH
    • Series: STP4NK60ZFP
    • Packaging: Tube
    • Brand: STMicroelectronics
    • Configuration: Single
    • Fall Time: 16.5 ns
    • Height: 9.3 mm
    • Length: 10.4 mm
    • Product Type: MOSFET
    • Rise Time: 9.5 ns
    • 1000
    • Subcategory: MOSFETs
    • Transistor Type: 1 N-Channel
    • Typical Turn-Off Delay Time: 29 ns
    • Typical Turn-On Delay Time: 12 ns
    • Width: 4.6 mm
    • Unit Weight: 2 g

    Parametri

    600V
    4A
    70W
    1R76
    TO-220

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