Apraksts

• Manufacturer STMicroelectronics
• Type of transistor N-MOSFET
• Technology MDmesh™ || Plus
• Polarisation unipolar
• Drain-source voltage 600V
• Drain current 2.9A
• Power dissipation 20W
• Case TO220FP
• Gate-source voltage ±25V
• On-state resistance 1200mΩ
• Mounting THT
• Kind of package tube
• Kind of channel enhanced
• Features of semiconductor devices ESD protected gate
• Additional information
• Gross weight: 1.693 g
• Manufacturer part number: STF6N60M2

Parametri

600V
4.5A
20W
1R06
TO-220F

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