Apraksts

• Manufacturer SHINDENGEN
• Type of transistor N-MOSFET
• Technology Hi-PotMOS2
• Polarisation unipolar
• Drain-source voltage 600V
• Drain current 3A
• Pulsed drain current 12A
• Power dissipation 52.5W
• Case FTO-220AG (SC91)
• Gate-source voltage ±30V
• On-state resistance 2.3Ω
• Mounting THT
• Gate charge 10nC
• Kind of package bulk
• Kind of channel enhanced

Parametri

600V
3A
52W
2R3
TO-220F

Papildu dokumentācija