Apraksts

• Manufacturer: STMicroelectronics
• Product Category: MOSFET
• RoHS: N
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 60 V
• Id - Continuous Drain Current: 55 A
• Rds On - Drain-Source Resistance: 19 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 130 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: STMicroelectronics
• Configuration: Single
• Fall Time: 50 ns
• Forward Transconductance - Min: 35 S
• Height: 9.15 mm
• Length: 10.4 mm
• Product Type: MOSFET
• Rise Time: 120 ns
• Series: STP55NE06
• 50
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel
• Type: MOSFET
• Width: 4.6 mm
• Unit Weight: 2 g

Parametri

60V
55A
130W
0R019
TO-220

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