Apraksts

• Manufacturer TOSHIBA
• Type of transistor N-MOSFET
• Polarisation unipolar
• Drain-source voltage 60V
• Drain current 58A
• Power dissipation 110W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 4.4mΩ
• Mounting THT
• Gate charge 46nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.96 g
• Manufacturer part number: TK58E06N1,S1X

Parametri

60V
58A
110W
0R0044
TO-220

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