Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 60V
• Drain current 270A
• Power dissipation 375W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 2.5mΩ
• Mounting THT
• Gate charge 200nC
• Kind of package tube
• Kind of channel enhanced
• Papildu informācijas
• Masa bruto: 2.01 g
• Oriģināls simbols: IRFB3006PBF

Parametri

60V
195A
375W
0R0021
TO-220

Papildu dokumentācija